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| Ordering number : ENA0710 JCH3101 JCH3101 Features * * * * PNP Epitaxial Planar Silicon Transistors For Automotive Audios Adoption of MBIT processes. High breakdown voltage and large current capacity. High-speed switching. High reliability. / Reliability test 2000 hours guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg When mounted on ceramic substrate (600mm20.8mm) Conditions Ratings --100 --100 --6 --1 --2 0.9 150 --55 to +150 Unit V V V A A W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=-100V, IE=0A VEB=--4V, IC=0A VCE=-5V, IC=-100mA VCE=-10V, IC=-100mA VCB=-10V, f=1MHz 140 120 13 Ratings min typ max --100 --100 400 MHz pF Unit nA nA Marking : 5A Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22008EA TI IM TC-00001203 No. A0710-1/4 JCH3101 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=-400mA, IB=--40mA IC=-400mA, IB=--40mA IC=-10A, IE=0A IC=-1mA, RBE= IE=--10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --100 --100 --6 80 700 40 Ratings min typ -0.2 -0.85 max --0.6 --1.2 Unit V V V V V ns ns ns Package Dimensions unit : mm (typ) 7015A-003 2.9 0.6 Switching Time Test Circuit 0.15 PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 RB 3 0.2 RL + 470F --50V 2.8 1.6 0.05 + 100F 0.6 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 5V 0.2 IC= --10IB1=10IB2= --400mA 0.9 --1.0 --0.9 IC -- VCE 0m A --1.0 IC -- VBE VCE= --5V --2 5 mA 5 --1 mA A --10m Collector Current, IC -- A --0.8 Collector Current, IC -- A --0.8 --0.7 --2 --5mA --0.6 --0.5 --0.6 Ta=85C 25C --0.7 --3mA --0.4 --0.3 --0.2 --0.1 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --0.4 --2mA --1mA --0.2 IB=0mA --4.5 --5.0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.8 --0.9 --1.0 Collector-to-Emitter Voltage, VCE -- V 5 IT07232 3 hFE -- IC Base-to-Emitter Voltage, VBE -- V --40C IT13162 f T -- IC VCE= --5V Gain-Bandwidth Product, fT -- MHz 3 VCE= --10V 2 Ta=85C 25C DC Current Gain, hFE 2 --40C 100 7 5 100 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A --1.0 IT13163 7 3 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 IT07238 No. A0710-2/4 JCH3101 5 Cob -- VCB f=1MHz 7 5 VCE(sat) -- IC IC / IB=10 Output Capacitance, Cob -- pF Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 3 2 2 --0.1 7 5 3 2 10 7 5 8 Ta= 5C --40 C 25C 3 --1.0 2 3 5 7 --10 2 3 5 Collector-to-Base Voltage, VCB -- V 3 7 --100 IT07240 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 5 7 --1.0 IT13164 VBE(sat) -- IC IC / IB=10 ASO 3 2 ICP= --2A IC= --1A <10s Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 Collector Current, IC -- A --1.0 7 5 3 2 --0.1 7 5 3 2 1m s 100 s s 0 50 Di ssi pa tio --1.0 7 Ta= --40C 85C 10 ms 10 0m era nL s im tion ite S d /B DC op 25C Li m 5 ite d --0.01 7 5 3 2 3 2 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 5 3 2 --1.0 IT13165 7 --0.001 --0.1 Ta=25C Single pulse When mounted on ceramic substrate (600mm20.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100 2 Collector-to-Emitter Voltage, VCE -- V 1.0 IT07246 ASO PC -- Ta ICP= --2A IC= --1A <10s Collector Current, IC -- A --1.0 7 5 3 2 --0.1 7 5 3 2 Collector Dissipation, PC -- W 1m s 50 10 ms 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2 0 20 40 When mounted on ceramic substrate (600mm20.8mm) Di ssi DC o pa pera tio tio nL n im ite 10 0m s 0 s 100 s d S /B Li m ite d --0.01 7 5 3 2 --0.001 --0.1 Ta=85C Single pulse When mounted on ceramic substrate (600mm20.8mm) 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7--100 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V IT13378 Ambient Temperature, Ta -- C IT07247 No. A0710-3/4 JCH3101 JCH3101 Reliability Assurance Test Environmental Test Temperature Cycle Thermal Shock Pressure Cooker Test (Autoclave) Endurance Test Steady State Operating Life Intermittent Operating Life High Temperature Reverse Bias Temperature Humidity Storage High Temperature Storage Low Temperature Storage Temperature Humidity Reverse Bias Electrostatic Discharges Machine Model C=200pF, R=0, 3 times 200V Ta=25C, Tj=150C Ta=25C, Tj=90C Ta=150C, VCES=100V Ta=85C, 85%RH Ta=150C Ta=-55C Ta=85C, 85%RH, VCES=100V 2000 hrs 20000 cycles 2000 hrs 2000 hrs 2000 hrs 2000 hrs 2000 hrs 10% 10% 10% 10% 10% 10% 10% --55C to 150C (30 min each) 100C to 0C (5 min each) Ta=121C, 100%RH, 203kPa 500 cycles 250 cycles 200 hrs 10% 10% 10% Test Conditions Test Time LTPD SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice. PS No. A0710-4/4 |
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